Investigation on Ultra-low Turn-off Losses Phenomenon for SiC MOSFETs with Improved Switching Model

Traditional SiC MOSFET switching models cannot predict the turn-off losses precisely in the condition of small driver resistance and small load current, because they have not considered a special case in which the SiC MOSFET closes its channel before the SiC diode turns into the freewheeling-state during turn-off transient. To solve this problem, this article presents an improved SiC MOSFET turn-o...