Investigation on Ultra-low Turn-off Losses Phenomenon for SiC MOSFETs with Improved Switching Model
IEEE Transactions on Power Electronics(2021)
摘要
Traditional SiC MOSFET switching models cannot predict the turn-off losses precisely in the condition of small driver resistance and small load current, because they have not considered a special case in which the SiC MOSFET closes its channel before the SiC diode turns into the freewheeling-state during turn-off transient. To solve this problem, this article presents an improved SiC MOSFET turn-o...
更多查看译文
关键词
Silicon carbide,MOSFET,Semiconductor device modeling,Integrated circuit modeling,Capacitance,Mathematical model,Switches
AI 理解论文
溯源树
样例
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要