Influence of the Groove Depth on the Electrical Characteristics of the Vertical GaN Trench MOSFETs
2020 17th China International Forum on Solid State Lighting & 2020 International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)(2020)
Abstract
In this work, the groove depth of the vertical GaN trench MOSFETs have been investigated by TCAD simulation. The groove depth is found to have a crucial influence on the specific on-resistance and breakdown voltage. A deep enough groove is required to annihilate the build-in barrier between the p-body and the n-drift region close to the sidewall of the groove, in order to reduce the specific on-resistance. On the other hand, an increased groove depth will also cause electrical field peak and hence degrade the breakdown voltage. Therefore, there is a trade-off between the specific on-resistance and breakdown voltage, and optimization is required. This study has provided a quantitative analysis on the optimization scheme.
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Key words
electrical characteristics,vertical trench MOSFET,specific on-resistance,breakdown voltage,groove depth,TCAD simulation,p-body region,n-drift region,groove sidewall,electrical field peak,quantitative analysis,optimization scheme,GaN
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