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Effect of Crystallinity on the Electrical Characteristics of Poly-Si Tunneling FETs Via Green Nanosecond Laser Crystallization

IEEE ELECTRON DEVICE LETTERS(2021)

Cited 4|Views23
Key words
Green nanosecond laser crystallization (GLC),polycrystalline silicon (poly-Si),thin-film transistor (TFT),tunneling field effect transistor (tunneling FET)
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