Single-Event Latchup in a 7-Nm Bulk FinFET Technology
IEEE TRANSACTIONS ON NUCLEAR SCIENCE（2021）
Key words
Alpha particles,bulk FinFET,complementary metal-oxide-semiconductor (CMOS),cross section,holding voltage,latchup,neutron,radiation effects,single-event effects,single-event latchup (SEL),technology computer-aided design (TCAD),temperature
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