Optimization Of Source Material For In-Situ Arsenic Doping Via Vapor Transport Deposition Of Cdte Films

Seth W. McPherson,Tawfeeq Al-Hamdi,Joel N. Duenow,X. Zheng,David S. Albin,Tursun Ablekim,Eric Colegrove,Mahisha Amarasinghe,Wyatt K. Metzger,Santosh K. Swain,Kelvin G. Lynn

2020 47TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)（2020）

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Abstract

In-situ doping of CdTe/CdSeTe films with arsenic is performed using pre-doped source material prepared by high pressure Bridgman (HPB) melt growth. Arsenic level in the source material is varied from 10(18)-10(20) cm(-3). Correspondingly, dopant incorporation in the films prepared using vapor transport deposition (VTD) varied from 3x10(17) cm(-3)-1x10(18) cm(-3). In this range, dopant activation is found to inversely correlate with the dopant incorporation, suggesting compensation. The results from this study indicate film properties can be adjusted by source material.

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Key words

pre-doped source material,high pressure Bridgman melt growth,dopant incorporation,vapor transport deposition,film properties,dopant activation,CdTe-CdSeTe films,arsenic doping,optimization,CdTe-CdSeTe

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