Gaassbn For Multi-Junction Solar Cells

Multi-junction solar cells, according to the detailed balance limit, should be able to achieve efficiencies above 50 percent. Work on new materials is necessary for improvements beyond the current state of the art. In this work, we evaluate the use of GaAsSbN, which has shown promise for multi-junction solar cells, particularly targeting the 1eV cell. Epitaxial growth of this material in this work has been achieved via liquid phase epitaxy, as it can produce high quality crystalline layers. We present our initial growth and characterization results of a GaAsSbN layer. Also presented are results showing the incorporation of this material in a solar cell.