A Monolithically Integrated Optical Bandpass Receiver in 0.25μm SiGe BiCMOS Technology for Microwave-Photonic Applications

In this paper we present an optical receiver that features a bandpass characteristic and is monolithically integrated with a Germanium photodiode in a silicon photonic technology working at millimeter-wave frequencies. We demonstrate a large electrical 3-dB bandwidth of 62 GHz at a center-frequency of 65 GHz, 12.5 dB gain, an OP1dB of 0.4 dBm, a power consumption of 58 mW and an opto-electrical 3-dB bandwidth of 20 GHz. Due to the monolithic integration and performance shown, the optical bandpass receiver appears to be the preferred solution for optoelectronic oscillators, optical antenna remoting, multi-Gbps radio-over-fiber systems and other microwave photonic applications.