Fringe Gate Leakage of 28nm HK/MG nMOSFETs with Nitridation Treatments
2020 3rd IEEE International Conference on Knowledge Innovation and Invention (ICKII)(2020)
摘要
DPN nitridation treatment is a useful method to improve the related dielectric constant (k-value) and trap issues in the formation of high-k gate dielectric. In this work, the main focus aims on the gate leakage after the high-k growth and the shape formation after etching process with the same concentration of nitrogen, but the different annealing temperatures. Using three tested devices with normal long-channel, bulk-area, and finger-type devices to probe the leakage issue related to the processes is a feasible and possible way.
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关键词
high-k,deposition,gate leakage,nitridation
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