P-Gan Gated Algan/Gan E-Mode Hfet Fabricated With Selective Gan Etching Process

An O-2 based selective GaN etching process was developed herein for use in p-GaN gated AlGaN/GaN heterojunction field-effect transistor fabrication, where precise control of the p-GaN etching was an important process step that determined the device characteristics. The p-GaN layer was etched by a two-step process: low damage BCl3/Cl-2 plasma etching in conjunction with Cl-2/N-2/O-2 based selective etching. A high selectivity of 53:1 for the p-GaN:AlGaN was achieved by the Cl-2/N-2/O-2 plasma etching. The device fabricated by the optimized etching process exhibited excellent enhancement-mode characteristics, i.e., a threshold voltage of 2.45 V, a specific on-resistance of 5.55 m Omega.cm(2), an on/off ratio of similar to 10(9), and an off-state breakdown voltage of >1100 V.