Two-bit Storage Recording Head Based on the Magnetic Thin Film Device

A prototype of a kind of two-bit data recording head based on the $\mathrm{Ni}_{0}.{}_{85}\mathrm{C}\mathrm{o}_{0.15}$ thin film devices is proposed. Thin film devices with a two-terminal structure were fabricated by a two-step e-beam lithography (EBL) and e-beam evaporation (EBE) process, ensuring that this kind of devices possesses M-shaped magnetoresistance (MR) curves. The reading and writing of data can be realized by adjusting the magnetic field to change the magnetoresistance value. The consistency of the devices has been also experimentally confirmed.