Study of lateral growth regions in ammonothermal c-plane GaN

Lei Xu,Tengkun Li,Guoqiang Ren,Xujun Su,Xiaodong Gao,Shunan Zheng,Haixiao Wang,Ke Xu

Journal of Crystal Growth（2021）

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摘要

•CL images of the cross-section shows different lateral growth regions.•TOF-SIMS mapping showed the spatial distribution of O, H, Si and C impurities in lateral growth regions.•There is 35Mpa and 71Mpa stress variation at the interface.•The evolution process of lateral crystal growth.

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关键词

A1. Characterization,A2. Ammonothermal crystal growth,,B1. Gallium compounds,,B2. Semiconducting III-V materials

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