RC Tightened Corner Test structure Design and Silicon Characterization in FinFET Technology
international conference on solid state and integrated circuits technology(2020)
Abstract
In this work, we propose a novel RC tightened corner test structure for FinFET Technology. In this test structure, Parasitic RC DUTs (Design Under Test) integrated into RO (Ring Oscillator) have been designed to verify and calibrate MEOL (Mid-End-Of-Line) and BEOL (Back-End-Of-Line) RC tightened corner; On the other hands, addressable-array circuit has been used to avoid noise induced by the local variation of FEOL (Front-End-Of-Line) transistors. By the test structure silicon data, RC tightened corners generated from statistical simulation have been iterated and updated
MoreTranslated text
Key words
corner test structure,novel RC,test structure silicon data,Front-End-Of-Line,FEOL transistors,Back-End-Of-Line,Mid-End-Of-Line,Design Under Test,Parasitic RC DUTs,FinFET Technology
AI Read Science
Must-Reading Tree
Example
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined