Minimized Junction Leakage Current for Nanoscale Mosfet Applications

Ultra-low leakage current development for extreme high threshold voltage (EHVT) devices had become a challenge for the low power consumption application in advanced CMOS technology. This paper experimentally shows the reduction of leakage current by engineering Halo and LDD implant to achieve the EHVT device via 28nm high-k metal-gate (HKMG). The drain (I _off ) and bulk (I _offb ) leakage current exhibit 75% and 88% reduction comparing with regular sample at the same on-state current (Ion). The leakage current mechanisms as well as the correlation with experimental conditions have been discussed in detailed in this paper. The ultra-low leakage device has great potential for low power application.