Effect of illumination on the electrical characteristics of Au/n-GaP/Al and Au/Chlorophyll-a/n-GaP/Al structures

Fikriye Şeyma Kaya,Songül Duman,İkram Orak,Özlem Baris

Materials Science and Engineering: B（2021）

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摘要

•Chl-a film was formed on the n-GaP by spin-coating technique.•Au/n-GaP/Al and Au/chl-a/n-GaP/Al structures were fabricated.•The photocurrent in the reverse bias voltage was increased by increasing photo-illumination intensity.•The Au/n-GaP/Al and Au/chl-a/n-GaP/Al structures can be used in optoelectronic applications for the detection of light.

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关键词

Metal-semiconductor contacts,Chlorophyll-a,Barrier height,Series resistance,Ideality factor,Photovoltaic parameters

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