The Superjunction Device with Optimized Process Window of Breakdown Voltage
international conference on solid state and integrated circuits technology（2020）
Abstract
In order to improve the process window of breakdown voltage (BV), a vertical variable doping (VVD) superjunction MOSFET (SJ-MOS) is proposed. The charge superposition principle is used to analyze the change of electric field (e- field) caused by the gradient doping of pillars. Compared with the uniform doping SJ-MOS, it is shown that the negative doping gradient in P-pillar and the positive doping gradient in N-pillar can make the distribution of e- field more uniform, which is beneficial to the expansion of the BV process window.
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Key words
negative doping gradient,P-pillar,positive doping gradient,N-pillar,BV process window,superjunction device,optimized process window,breakdown voltage,vertical variable doping superjunction MOSFET,VVD,SJ-MOS,charge superposition principle,electric field
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