Source-Drain Punch-Through Analysis of High Voltage Off-State AlGaN/GaN HEMT Breakdown

AlGaN/GaN high-electron mobility transistor's (HEMT's) off-state breakdown is investigated using conventional three-terminal off-state breakdown I-V measurement. Competition between gate leakage and source-injection buffer leakage (SIBL) is discussed in detail. It is found that the breakdown is dominated by source-injection which is sensitive to gate voltage and gate length at large gate-to-drain spacing (Lgd > 7 mu m), where a threshold drain voltage of the occurrence of the SIBL current in GaN buffer exists, and after this threshold voltage the SIBL current continually increased till the buffer breakdown. Our analysis showed that due to the punch-through effect in the buffer, a potential barrier between 2DEG and GaN buffer at the source side mainly controlled by the drain voltage determines the buffer leakage current and the occurrence of the following buffer breakdown, which could explain the experimentally observed breakdown phenomenon.