Very High Brightness, High Resolution CMOS Driving Circuit for Microdisplay in Augmented Reality.

MWSCAS(2020)

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摘要
In augmented reality applications, high brightness at high resolution is crucial to guarantee a good user experience. Explorations on efficient light sources have already been undertaken, and GaN µLEDs tend to be a good candidate. Nevertheless, micro-display driving circuits usually do not provide sufficient luminance level to offer good contrast against ambient light. We report the design and fabrication of a GaN LED microdisplay driving circuit, designed in a 0.18µm CMOS process with a 1640x1033 resolution. Each LED is controlled individually by a CMOS pixel with a 9.5µm pitch. The monochrome green microdisplay enables more than the WSXGA resolution and can reach 3.8MCd/m2 for a fully ON micro-LED array. This driving circuit enables, to our knowledge, the highest brightness for such a pixel pitch and resolution.
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关键词
microdisplay driving circuit, GaN micro-LED, high brightness, augmented reality, pulse width modulation, HUD, near-to-eye
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