Stretchable And Twistable Resistive Switching Memory With Information Storage And Computing Functionalities

High-performance stretchable and twistable nonvolatile memory devices with logic-in-memory functionality are highly desired for the development of future wearable electronics such as smart clothing. However, it is challenging to fabricate these memory devices using rigid functional materials based on conventional film deposition and patterning techniques. Herein, the first intrinsically stretchable and twistable resistive switching memory is reported using spin-coated poly(dimethyl siloxane) elastomer as the storage medium and printed liquid metal as the electrodes. The memory device is found to exhibit a reliable resistive switching behavior under up to 30% stretching strain and 90 degrees torsional deformation, possessing a large memory window (approximate to 10(2)) and an excellent retention (>10(4) s). Under 30% strain, stretching-release endurance of >500 cycles as well as excellent data integrity during the dynamic stretching-release process is demonstrated. Beyond data storage, logic-in-memory computation prototype represented by a one-bit full adder is successfully implemented within four operation steps based on three stretched memory cells. This work will be highly valuable in materials and structure design towards the development of high-performance and multifunctional wearable electronic modules and systems.