Low Temperature Cu/Sio2 Hybrid Bonding With Metal Passivation

Cu/SiO2 hybrid bonding process with short duration (1 minute) has been successfully performed at low temperature (120 degrees C) under the atmosphere with metal passivation material. Electrical performance (over 15K daisy chain and 10(-8) Omega-cm(2) specific contact resistance), mechanical strength (>15kgf), and reliability have been conducted to verify its excellent bonding quality. This method of hybrid bonding therefore provides a wide range of applications and a new solution for 3D integration.