Cover Feature: The Weak 3D Topological Insulator Bi 12 Rh 3 Sn 3 I 9 (Chem. Eur. J. 67/2020)

Research on topological insulators (TIs) has rapidly progressed, notably owing to their intriguing physical properties. These materials are bulk semiconductors but host protected metallic surface states. As shown in the cover artwork, the spins of the electrons in these states are locked orthogonally to their propagation direction. Specific symmetries of the electronic band structure allow dissipation-free electron and information transport. Therefore, they are envisioned as promising candidates in the development of high-performance spin field-effect transistors and quantum bits. More information can be found in the Full Paper by M. Ruck et al. on page 15549.