Suspension And Transfer Printing Of Zncdmgse Membranes From An Inp Substrate

Wide bandgap II-VI semiconductors, lattice-matched to InP substrates, show promise fir use in novel, visible wavelength photonic devices; however, release layers for substrate removal are still under development. An under-etch method is reported which uses an InP substrate as an effective release layer for the epitaxial lift-off of lattice-matched ZnCdMgSe membranes. An array of 100-mu m-square membranes is defined on a ZnCdMgSe surface using dry etching and suspended from the InP substrate using a three-step wet etch. The ZnCdMgSe membranes are transfer-printed onto a diamond heatspreader and have an RMS surface roughness < 2 nm over 400 mu m(2), similar to the epitaxial surface. Membranes on diamond show a photoluminescence peak at similar to 520 nm and a thermal redshift of 4 nm with similar to 3.6 MWm(-2) continuous optical pumping at 447 nm. Effective strain management during the process is demonstrated by the absence of cracks or visible membrane bowing and the high brightness photoluminescence indicates a minimal non-radiative defect introduction. The methodology presented will enable the heterogeneous integration and miniaturization of II-VI membrane devices. Published by The Optical Society under the terms of the Creative Commons Attribution 4.0 License.