Enhanced Pockels Effect In Strained Silicon By Means Of A Sige/Si/Sige Slot Structure

2020 IEEE PHOTONICS CONFERENCE (IPC)（2020）

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摘要

A slot waveguide structure made of a SiGe/Si/SiGe heterojunction is proposed to enhance Pockels effect in strained silicon. The strain is applied via lattice mismatch between layers, while the slot configuration optimizes the overlap between the optical and electric field inside the strained silicon.

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关键词

silicon photonics, strained silicon, germanium

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