Deposition of AlN Thin Film by High-Power Impulse Magnetron Sputtering with Tilted Sputter Target at Different Working Pressure

The deposition of AlN thin film was conducted in three different working pressures of 3, 5 and 10 mTorr by HiPIMS method with tilted sputter target. XRD pattern shows nearly single crystalline of a-axis AlN thin films were produced. AlN thin film growth rate increase with the decrease of working pressure as agreed by FESEM cross-sectional images. The thickness of AlN thin film observed at 267 nm, 221nm, and 183 nm for 3 mTorr, 5 mTorr and 10 mTorr, respectively. The degree of crystallinity was observed higher at lower working pressure at 64.3% and reduced to 52.02% at 10 mTorr. However, the micro strain and dislocation density were observed improved over the increase of working pressure referring to single-crystalline a-axis AlN dominant peak.