Demonstration of β-Ga₂O₃ Junction Barrier Schottky Diodes With a Baliga's Figure of Merit of 0.85 GW/cm² or a 5A/700 V Handling Capabilities

In this article, we report on demonstrating the first vertical β-Ga ₂ O ₃ junction barrier Schottky (JBS) diode with the implementation of thermally oxidized p-type NiO to compensate for the dilemma of the forfeit of the p-type β-Ga ₂ O ₃ . With this wide-bandgap p-type NiOx, β-Ga ₂ O ₃ JBS diodes with an area of 100 × 100 μm ² achieve a breakdown voltage (BV) and specific on-resistance Ron,sp of 1715 V and 3.45 mΩ·cm ² , respectively, yielding a Baliga's figure of merit (FOM) of BV ² /Ron,sp = 0.85 GW/cm ² , which is the highest direct-current FOM value among all β-Ga ₂ O ₃ diodes. Meanwhile, a large size JBS diode with the area of 1 × 1 mm ² shows a forward current IF and BV of 5 A/700 V, which is also the best IF and BV combinations (FOM = 64 MW/cm ² ) among all published results about large-area Ga ₂ O ₃ diodes. Dynamic switching characteristics reveal that the diode suffers from a negligible current collapse phenomenon even at a -600 V and 10 ³ s stress, showing the great promise of implementing p-NiO in the future β-Ga ₂ O ₃ power electronic devices.