Undoped SiGe material calibration for numerical nanosecond laser annealing simulations
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)(2020)
Abstract
Physical parameters calibration (dielectric and alloy properties) of Si
1-X
Ge
X
alloys is presented in order to simulate the Ultra Violet-Nanosecond Laser Annealing (UVNLA) of this material for Si/ Si
1-X
Ge
X
based MOS devices. Optical and physical parameters are extracted and modeled from experimental characterizations for several Ge concentrations and then fitted to match experimental laser annealing results. A good prediction, in terms of melt depth and melting duration, is achieved for different Ge concentrations between 20 and 40%, usually encountered in Si
1-X
Ge
X
CMOS integration process.
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Key words
Laser annealing,melt depth,SiGe alloy characterization
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