Performance Of Hydrogenated Diamond Field-Effect Transistors On Single And Polycrystalline Diamond
JOURNAL OF SEMICONDUCTORS(2020)
摘要
In this work, we investigate the influence of defect concentration of the diamond substrates on the performance of hydrogen-terminated diamond field-effect transistors by Raman spectra, pulsed I-V characteristics analysis, and radio frequency performances measurements. It is found that a sample with higher defect concentration shows larger drain-lag effect and lower large-signal output power density. Defects in the diamond act as traps in the carrier transport and have a considerable influence on the large-signal output power density of diamond field-effect transistors. This work should be helpful for further performance improvement of the microwave power diamond devices.
更多查看译文
关键词
diamond, transistor, trap, defect, power density
AI 理解论文
溯源树
样例
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要