Correction: Switching of linear and nonlinear optical parameters in As35Se65 thin films upon annealing at both above and below Tg

The present manuscript investigated the effect of thermal annealing at 150 °C (below T g ) and 250 °C (above T g ) on the nonlinear as well as linear optical parameters and structural changes of the thermally evaporated As 35 Se 65 thin films. The structural investigation was done by X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy, whereas the surface morphology was studied by field emission scanning electron microscopy. The optical transmission and reflection spectra over the wavelength range 500–1200 nm were used to calculate the optical parameters. The optical energy gap, Urbach energy, optical density, skin depth, Tauc parameters for the as-deposited and annealed As 35 Se 65 films were estimated and discussed in terms of density of defect states and disorders. The indirect optical energy gap decreased for 150 °C annealed film and abruptly increased for 250 °C annealed film as compared with the as-prepared film. The Swanepoel envelope method, WDD model, and Sellemeire postulates were employed for analysis of refractive index, static refractive index, dispersion energy, oscillator wavelength, oscillator energy, and dielectric constant. The non-linear refractive index and third-order susceptibility were also estimated with the help of empirical relations which showed opposite changes for the two annealing temperatures. The tunable optical properties can be applied for several optoelectronic application.