Implant heating contribution to amorphous layer formation: a KMC approach

P. L. Julliard,P. Dumas, F. Monsieur, F. Hilario,D. Rideau,A. Hemeryck,F. Cristiano

2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)（2020）

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摘要

The present work investigates the influence of implantation induced heating on the amorphization profile in silicon wafer. A simulation approach based on a Kinetic Monte Carlo method is compared to experimental implantations and characterizations. We demonstrate that a backside pressure cooling can be used to tune amorphous layer thickness.

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关键词

amorphization,Kinetic Monte Carlo,implantation induced heating,machine parameters

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