Research on the Switching Characteristic of SiCMOSFET and its Applications in DC Distribution System

This paper investigates the switching characteristics of SiC MOSFET. The turn-on and turn-off switching transient processes of power device are analyzed respectively by the mathematical equation on the basis of double-pulse test circuit. Based on the analysis of the influence of parasitic parameters on the switching characteristics, it indicates that the appropriate driving resistance should be selected and power circuit stray inductance should be reduced. The prototype of dual active bridge (DAB) has been built and the experimental results validate the correctness of theoretical analysis.