Dependence of laser parameters on structural properties of pulsed laser-deposited MoS 2 thin films applicable for field effect transistors

The pulsed laser deposition (PLD) technique can be efficient and cost-effective in the fabrication of high-quality MoS 2 thin films. The laser pulse parameters, such as the number of pulses, the pulse energy density, and the frequency, that influence the MoS 2 thin films quality have been investigated. The optimum parameters of laser pulse for the best crystalline quality MoS 2 films were determined by experiments. Back-gated field effect transistors (FETs) were fabricated based on the MoS 2 thin film. The carrier mobility of the MoS 2 back-gated FETs has reached 4.63 cm 2 V −1 S −1 . The responsivity of the MoS 2 back-gated FETs is approximately 0.06 AW −1 at drain voltage of − 2 V. These results show that the back-gated FETs based on MoS 2 thin films prepared by PLD can be applied to photodetectors.