Compact Modeling of Capacitance Components for GaN HEMTs

The compact Modeling of Capacitance Components for GaN HEMTs is presented in this paper. From the charge control equations, the surface potential is modeled analytically. From the surface potential calculation beginning, various terminal intrinsic charges and capacitance expressions are derived self-consistently with developed I-V model. On the other hand, the parasitic capacitance components are expressed by the means of the conforming method and transport line equation. As a result, the full capacitance model for the GaN HEMT devices are established. With the experimental data and simulation, the developed model is evaluated and verified with good agreements with measured and simulation data.