Investigation on Surge Current Capability of 4H-SiC Trench-Gate MOSFETs in Third Quadrant Under Various V GS Biases

Zhengyun Zhu,Hongyi Xu,Li Liu,Na Ren,Kuang Sheng

IEEE Journal of Emerging and Selected Topics in Power Electronics（2021）

引用 17|浏览17

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摘要

In this work, third-quadrant $I$ – $V$ characterization and surge current tests are carried out on SiC asymmetric-trench MOSFET (DUT A) and SiC double-trench MOSFET (DUT B) under various gate–source biases ( $V_{\...

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关键词

Surges,MOSFET,Silicon carbide,Logic gates,Surge protection,Temperature measurement,Substrates

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