Influence of Substrate Resistivity on Porous Silicon Small-Signal RF Properties
IEEE Transactions on Electron Devices(2020)
Abstract
This article provides guidelines to design porous silicon (PS) layers regarding optimization of smallsignal properties in passive structures for radio frequency (RF): insertion loss and crosstalk. Results are based on high-frequency measurements on 200-mm wafers and electromagnetic simulations up to 40 GHz. Using substrate resistivity below 1 Ω cm allows the best tradeoff with minimized PS thickness.
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Key words
Crosstalk,linear attenuation coefficient,porous silicon (PS),S-parameters,substrate resistivity
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