Shallow-Mesa Inp Avalanche Photodiode With Ultralow Dark Current
2020 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)（2020）
Abstract
A shallow-mesa InP avalanche photodiode is proposed and fabricated by a simple dry etching process. The device exhibits a remarkably low dark current of 4 pA at unit gain and a high gain of 320. (C) 2020 The Author(s)
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Key words
shallow-mesa InP avalanche photodiode,ultralow dark current,unit gain,dry etching,current 4.0 pA,InP
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