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Broadband, High-Speed, And Extraordinarily Large All-Optical Switching With Yttrium-Doped Cadmium Oxide

Soham Saha,Benjamin T. Diroll,Joshua Shank,Zhaxylyk Kudyshev,Aveek Dutta,Sarah Nahar Chowdhury,Ting Shan Luk,Salvatore Campione,Richard D. Schaller,Vladimir M. Shalaev,Alexandra Boltasseva,Michael G. Wood

2020 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)（2020）

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Abstract
We demonstrate significant epsilon-near-zero point shifts (11.3 mu m to 5.3 mu m), extraordinarily large (135%) optically-induced reflection modulation with picosecond response times, and carrier relaxation time-engineering in cadmium oxide via Yttrium doping. (C) 2020 The Author(s)
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optically-induced reflection modulation,yttrium-doped cadmium oxide,carrier relaxation time,epsilon-near-zero point shifts,high-speed all-optical switching,CdO:Y
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