In-device high resolution and high throughput optical metrology for process development and monitoring
2020 31st Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC)(2020)
摘要
With continuous scaling and increased design and process complexity, there is an increasing need for semiconductor manufacturing process control. This need calls for not only advanced methods and more capable tools, but also additional intra-wafer and across-lot sampling to capture process variations and/or changes in process signatures. In this paper we will demonstrate high speed full wafer metrology use cases from the KLA CIRCL (TM) platform. CIRCL is a versatile all-surface wafer inspection platform, and its front-side patterned wafer inspection system is typically used for very high throughput inline macro defect inspection. Here we demonstrate that this tool can also be used for certain types of metrology applications. In this paper, we will investigate metrology opportunities with high sampling and full wafer coverage for critical process parameters. We use two test vehicles for demonstration purposes, namely, a 32nm pitch line-space defect vehicle patterned with single exposure EUV (extreme ultraviolet) lithography and an iN7 BEOL (back end of line) integration test vehicle, also patterned with single exposure EUV lithography.
更多查看译文
关键词
High Sampling Metrology,High Spatial Resolution,Process Control,Process Variation,Metrospection
AI 理解论文
溯源树
样例
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要