Compact Band Model and Carrier Mobility Calculation for Multilayer Black Phosphorous

This work analyzes the compact band model from tight-binding (TB) method and carrier mobility in few-layer black phosphorous (BP) metal-insulator-semiconductor field-effect transistors. To do it, the Poisson and Schrödinger equations are self consistently solved using the compact band model to study the Γ band structure of few-layer BP from first principle method. The mobility is calculated using the Kubo-Greenwood approach under the momentum relaxation time approximation. The influence of the semiconductor thickness, the temperature and the impurity scattering are analyzed. A good agreement with the experimental results presented in the literature is achieved.