Formation of Pores in Thin Germanium Films under Implantation by Ge + Ions
Technical Physics Letters(2020)
摘要
Results are presented of a study of the morphology of germanium films nanostructured by ion implantation. Film samples were grown by magnetron sputtering in an ultrahigh-vacuum installation and then irradiated with 40 keV Ge + ions at fluences in the range of (1.8–8) × 10 16 ions/cm 2 . Scanning electron microscopy demonstrated that vacancy complexes with diameters of ~50–150 nm are gradually formed in the bulk of implanted germanium with increasing implantation fluence. After a certain implantation fluence is reached, the complexes emerge on the surface, thereby forming a developed surface profile of the irradiated films.
更多查看译文
关键词
nanostructured germanium,ion implantation,lithium-ion batteries.
AI 理解论文
溯源树
样例
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要