Fundamental studies of ZnO nanowires with ZnCdO/ZnO multiple quantum wells grown for tunable light emitters

SENSORS AND ACTUATORS A-PHYSICAL(2020)

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Abstract
Among various elements, cadmium incorporation into ZnO serves the purpose of bandgap narrowing effi-ciently, because of lower bandgap of CdO as compared to ZnO. Therefore, ZnCdO/ZnO multiple quantum wells (MQWs) nanowires on silicon substrates, which are under investigations in this paper, might find applications as laser sources and other oxide-based quantum devices. In the submitted paper we report on the structural and luminescence properties of the aforementioned ZnCdO/ZnO MQWs nanowires grown on Si substrate. The 30 period ZnCdO/ZnO MQWs nanowire heterostructures were fabricated by molecular beam epitaxy method without employing a catalyst such as Au or Ag. The structure of nanowires has been characterized using X-ray diffraction, Raman spectroscopy and scanning electron microscopy. Optical properties of the structures were studied by photoluminescence technique. (c) 2020 Elsevier B.V. All rights reserved.
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Key words
Semiconductors,Oxide materials,Crystal grown,Luminescence,X-ray diffraction
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