A Novel 6.5 kV Innovative Silicon Power Device (i-Si) with a Digital Carrier Control Drive (DCC-drive)

A novel system configuration of 6.5 kV rated i nnovative si licon (i-Si) power module combining a d igital c arrier c ontrol drive (DCC-drive) is proposed. Controlling the stored carriers’ density dynamically using digital signals through gate driver during the conduction of Dual side-gate hi gh-conductivity IG BT (Dual-gate HiGT) and a MOS controllable stored-carrier d iode (MOSD) can break through the leading-edge IGBT’s loss limit. A simulated 6.5 kV inverter system demonstrated -25% power loss from leading-edge IGBTs.