Graphene Oxide For Nonvolatile Memory Application By Using Electrophoretic Technique

The experimental work presented here, for the first time using electrophoretic technique to fabricate graphene oxide (GO)-based resistive random access memory (RRAM). By using electrophoretic technique, nonvolatile RRAM devices with Aluminum (Al)/GO/Indium tin oxide (ITO) cross-bar sandwich-like structure were fabricated. The fabricated devices show typical bipolar resistant switching behavior with ON/OFF ratio more than 10, retention time more than 102 s, and transition voltage less than 1.7 V. The switching mechanism for the devices is ascribed to the formation and rupture of the conducting filament induced by the diffusion of oxygen ions. The results show that the electrophoretic technique holds great potential for film manufacturing for RRAM.