A 1.8 Gb/s/pin 16tb NAND Flash Memory Multi-Chip Package with F-Chip of Toggle 4.0 Specification for High Performance and High Capacity Storage Systems
2020 IEEE Symposium on VLSI Circuits（2020）
关键词
high capacity storage systems,1-Tb NAND flash memory,third generation F-Chip,I/O power consumption,BIST,F-chip,SSD channels,data window,dual bi-directional transceiver architecture,Toggle 4.0 standard,data throughput,16Tb-NAND flash memory multichip package,Toggle 4.0 specification,chip DLL,PCIe Gen 4 host interface,high capacity storage devices,voltage 1.2 V
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