Dual-Port Field-Free SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations under 55-nm CMOS Technology and 1.2-V Supply Voltage
2020 IEEE Symposium on VLSI Circuits(2020)
Abstract
We demonstrate an SOT-MRAM, a nonvolatile memory using spin-orbit-torque (SOT) devices that have a read-disturbance-free characteristic. The SOT-MRAM fabricated by a 55-nm CMOS process achieves 60-MHz write and 90-MHz read operations with 1.2-V supply voltage under a magnetic-field-free condition. The SOT-MRAM is also implemented in a dual-port configuration utilizing three-terminal structure of the device, which realizes a wide bandwidth applicable to high-speed applications.
MoreTranslated text
Key words
MRAM,spin-orbit-torque,dual-port,spintronics
AI Read Science
Must-Reading Tree
Example
![](https://originalfileserver.aminer.cn/sys/aminer/pubs/mrt_preview.jpeg)
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined