Joining of reaction bonded silicon carbide using self-infiltration of residual Si present in the RBSC

The joining of RBSC ceramics was investigated using the self-infiltration of residual Si present in the RBSC base material, without any additional Si from external sources. Molten Si present in RBSC was sucked into the joint layer by capillary pressure and joining was achieved in this way. Silicon evaporation occurred during the joining process, but this could be prevented by reducing the holding time. Paper was used to control the thickness of the joint layer; when the number of paper sheets increased, the thickness of the joint layer also increased. The flexural strength of the joined specimen depended on the thickness of the joint layer. When the thickness of the joint layer was less than 30 mu m, the flexural strength of the joined specimen was similar to that of the RBSC base material, but as the thickness of the bonding layer increased, the bending strength decreased.