Sign-Alternating Photoconductivity in PbSnTe:In Films in the Space-Charge-Limited Current Regime

A. N. Akimov,I. O. Akhundov,D. V. Ishchenko, A. E. Klimov,I. G. Neizvestny, N. S. Paschin,S. P. Suprun,A. S. Tarasov,O. E. Tereshchenko, E. V. Fedosenko, V. N. Sherstyakova

SEMICONDUCTORS（2020）

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摘要

The dependence of the photoconductivity sign on the bias voltage, intensity, and duration of illumination is studied for PbSnTe:In films in the space-charge-limited current regime. The role of traps (including surface ones) with a complex energy spectrum in the effects under observation is discussed.

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关键词

photoconductivity, impurity states, surface states, PbSnTe

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