Highly Efficient Switching Operation of 1.2 kV-Class SiC SWITCH-MOS

A 1.2 kV silicon carbide (SiC) SBD-wall-integrated trench metal oxide semiconductor field effect transistor (MOSFET) (SWITCH-MOS) exhibits potential for solving body-PiN-diode-related problems such as bipolar forward degradation and switching losses among relatively low breakdown voltage 1.2 kV-class SiC MOSFETs. In this study, dynamic characteristics and switching losses of the SWITCH-MOS and conventional MOSFET are compared. The results demonstrate that the SWITCH-MOS exhibits smaller turn-on and reverse recovery losses than a conventional MOSFET at high temperatures. Ruggedness performances such as short circuit and unclamped inductive switching capabilities were evaluated.