A Power- and Area-Efficient CMOS Bandgap Reference Circuit with an Integrated Voltage-Reference Branch

This work presents a compact and low-power bandgap voltage-reference design using self-biased current mirror circuit. This design eliminates the standard complementary-to-absolute-temperature (CTAT) bipolar device in the voltage-reference branch, reducing the bipolar area by 20%. Instead, the design shares the same bipolar device in the main CTAT branch for generating the reference voltage. An additional benefit of eliminating the voltage-reference branch is the reduction of total power consumption by approximately 30%. This novel topology reduces power and area of the core bandgap reference circuit without compromising temperature drift performance. Designed, fabricated and functionally tested in a 0.6um CMOS process. The simulation result shows the temperature coefficient of this design is 6.3 ppm/°C for a temperature range of −40 to 125 °C. This bandgap reference design occupies a silicon area of 0.018 mm2 and draws an average quiescent current of 2 µA from a supply voltage of 3.3–5 V. The simulated flicker voltage noise is 4.34 µV/√Hz at 10 Hz.