Challenges in Extremely Low Specific On-Resistance with SiC SJ-VMOSFETs

Takeyoshi Masuda, Yu Saito,Tomoaki Hatayama,Hisato Michikoshi,Yasuki Mikamura,Shinsuke Harada

Materials Science Forum（2020）

引用 1|浏览17

暂无评分

摘要

A 0.63 mΩcm2 / 1170 V property was demonstrated in a 4H-SiC V-groove trench MOSFET with a super junction (SJ) structure. Successful results in SJ-VMOSFETs will inspire research on 600 to 1200 V class devices as their extreme high MOS channel mobility and the SJ structure is promising.

查看译文

关键词

sic,on-resistance,sj-vmosfets

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要