Influence Of Deposition Temperature And Precursor Pulse Time On Properties Of Sio2, Hfo2 Monolayers Deposited By Peald

Plasma-enhanced atomic layer deposition (PEALD) has been widely used in microelectronics due to its precise coating thickness control and high uniformity. Coating qualities are strongly affected by deposition parameters and can be tailored accordingly. In this work, SiO2 and HfO2 monolayers were deposited by PEALD on fused silica and BK7 substrates for different measurement. The influence of deposition temperature and precursor pulse time on both coatings were studied. Coating thickness was obtained by ellipsometer and coating roughness was extracted by atomic force microscope. Laser-induced damage threshold (LIDT) and damage morphology were also studied. By optimizing the process parameters, coatings with desired properties can be deposited.