High nonvolatile modulation of resistance on a ferroelectric PbZr0·2Ti0·8O3 /Nd0.3Sm0.25Sr0·45MnO3 liquid-gated electric-double-layer transistors

A ferroelectric polarization field electric-double-layer transistor based on the PbZr0·2Ti0·8O3 (PZT)/Nd0.3Sm0.25Sr0·45MnO3 (NSSMO) structure gated by ionic-liquid was established. The electrostatic modulation on the NSSMO channel was performed by applying electric field, while the respective non-volatile field effect upon the polarization field of PZT was investigated. Interestingly, a nonvolatile modulation on the resistance of NSSMO channel was observed, depending on the ferroelectric polarization field from PZT layer. Moreover, a large modulation of electrical conductivity of the NSSMO channel was achieved when applying a bias voltage of +3 V. This result indicates that a high nonvolatile electrostatic effect can be achieved in complex oxides devices under ferroelectric polarization field.